• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8x1015 atoms/cm3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/ &squ& . The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.
    公开号:SU1088676A3
    申请号:SU782675300
    申请日:1978-10-12
    公开日:1984-04-23
    发明作者:Яцуо Цутому；Момма Наохиро；Наито Масаеси；Окамура Масахиро
    申请人:Хитачи Лтд (Фирма)；
    IPC主号:
    专利说明:

    00
    wasp
    O5 vl
    O5 1108 The invention relates to power semiconductor electronics and can be used in the design of high-power thyristors for high voltages and currents. A thyristor is known in which, for improving parameters such as resistance to the rate of voltage rise (dn / dt), off time (t), operating temperature (T-) blocking voltages in the forward and reverse directions (Up dd, ), the pg base region uses a double profile of an acceptor impurity with a high gradient at the boundary with n-emitter oil and a low gradient at the boundary with the Pc base base (collector p-g junction), and the concentration of the acceptor impurity near the n,. . 1i with the ternary layer more, usually at the level of SP. The increase in the do / dt resistance, tn of the thyristor is due to a decrease in the injection coefficient G (–r emitter junction, and the increase in% RM is due to a decrease in the electric field in the region of the collector pn junction due to the low gradient of acceptor impurity near the junction. However, when designing high current thyristors (for DC power lines on a direct current), i.e., structures of a large area of more than 3-4 inches, it is technologically very difficult to ensure uniformity of the part of the base area with a high gradient Acceptor impurities over the entire area of the instrument, resulting in a significant reduction in the percentage of output of solid instruments.The closest technical solution to the invention is a thyristor containing a shunted Pr-emitter layer, a pg-base region, a tig-base region and p-emitter layer 2J. In the known device, a pg-base region without a plot with a high concentration gradient is used, i.e., the injection coefficient of the hg-emitter junction is increased, which reduces the voltage drop across the open pn-p-p structure. storing du / dt.n tn, in the base regions ubivaets supports of the lifetime via electron irradiation. The known device is used 2 MO in the manufacture of thyristors, 153 working in pulse-frequency modes, i.e. for relatively thin structures and, therefore, for devices with a low voltage (2000 V). The aim of the invention is to increase the injecting ability of the thyristor at high operating currents and voltages. This goal is achieved by the fact that in a thyristor containing a shunted pg-emitter layer, the p base base region of the Pr-base region and the pg emitter layer, the acceptor impurity is introduced with a decrease in concentration from the ng emitter layer into the Pg base region, and its the concentration at the border with the PS emitter layer is in the interval (J-8), the sheet resistance of the pd Bae region is in the interval of 50 (500500 Ohm / a, the width of the pg-base region is in the range of 90-110 µm at a depth of n-emitter layer 10 µm. The invention eliminates a number of The fundamental problems of developing and manufacturing high-voltage thyristors of a large area, i.e., high load currents. As a result of eliminating the need to create a section of the pg base area with a high concentration gradient of acceptor impurity, a high level of uniformity of the pg base profile over a large area, while there is no need for strict control of surface resistance, etc. The need to create a deep collector junction (100-120 µm) also makes it possible to ensure uniformity of its depth over a large area, taking into account the features of the diffusion technology for producing pnpn structures. The set of parameters of the thyristor structure N dr (1-8) 10, R 5rts (500-1500) Ohm / a, Wp 90110 microns, h, 10 microns mutually. is caught. If N then Ngp 1500 Ohm / o, WP software μm at hj -vlO μm const. 90 µm, NSP 8 X If WP, RSP 500 Ohms at / C h µm. Oh. this is due to the need to provide at the same time
    high values of du / dt, di / dt resistance, Tj, UJJpd of low values of PM — since du / dt, T. are directly proportional, and di / dt o6patHO are proportional to the values of AND,
    SPfi
    and w |
    RWP r and meer. Conductive aluminum diffusion on both sides of the plate is carried out to the initial silicon of the P-type conduction silicon with a specific resistance of 200-300 Ohm / cm, diameter of 85-110 mm and thickness of about 1 mm, resulting in a pg-base region and a PJ-emitter layer with a depth of about 150 microns (diffusion mode 1250 in an oxygen atmosphere of 50-70 hours). After this, using a chemical etching method, the layer with a depth of 40-60 microns is quite uniformly removed to the required sheet resistance
    in the range of 500-1500 ohm / p. The structures are then oxidized, photo-lithography is made under the diffusion of phosphorus, and the phosphorus is fused at llOO C for several hours to form an Ir-emitter layer with a depth of about 10 microns with a surface concentration of the order. Then ohmic contacts are applied to the cathode, the control cell, the anode is fused with the W-KOM sensor, and the chamfer is made, which is protected by an appropriate compound.
    The present invention allows the creation of a thyristor operating under conditions of high voltages and high currents, which makes it possible to use it for the transmission of large electric energies.
    权利要求:
    Claims (1)
    [1]
    THYRISTOR, containing a shunted n ^ emitter layer, ρθ-base region, ηθ-base region, and p E- emitter layer, characterized in that, in order to increase the injecting ability of the thyristor at high operating ! sneeze currents and voltages, acceptor impurity is introduced with a decrease in concentration of the n layer E -emitternogo -basic depth p in the region, and its concentration on the boundary with r "E -emitternym layer is in the range of (1-8) th cm ^ 3 * , sheet resistance of the ρ β -base region in the range of 500-1500 Ohm / α, the width p in the β-base region is in the range of 90-110 μm with a depth of the η ^ emitter layer of the order of 10 μm.
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    同族专利:
    公开号 | 公开日
    SE7810711L|1979-04-14|
    JPS5912026B2|1984-03-19|
    DE2844283C2|1985-07-18|
    CA1111148A|1981-10-20|
    DE2844283A1|1979-05-03|
    US4682199A|1987-07-21|
    JPS5456775A|1979-05-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE1514520B1|1965-07-30|1971-04-01|Siemens Ag|Controllable semiconductor component|
    DE1589538C3|1967-08-09|1974-01-10|Brown, Boveri & Cie Ag, 6800 Mannheim|Thyristor|
    US3855611A|1973-04-11|1974-12-17|Rca Corp|Thyristor devices|
    US3990091A|1973-04-25|1976-11-02|Westinghouse Electric Corporation|Low forward voltage drop thyristor|
    IT1010445B|1973-05-29|1977-01-10|Rca Corp|COM SEMICONDUCTOR RECTIFIER SUSTAINABLE TO THE STATE OF NON CONDUCTION BY MEANS OF AN AP VOLTAGE PLICED TO THE GATE ELECTRODE OF THE SAME|
    JPS5626986B2|1974-05-17|1981-06-22|
    US3897286A|1974-06-21|1975-07-29|Gen Electric|Method of aligning edges of emitter and its metalization in a semiconductor device|
    CH578254A5|1974-12-03|1976-07-30|Bbc Brown Boveri & Cie|
    US4060825A|1976-02-09|1977-11-29|Westinghouse Electric Corporation|High speed high power two terminal solid state switch fired by dV/dt|JPS6226626U|1985-07-31|1987-02-18|
    DE3917100A1|1989-05-26|1990-11-29|Eupec Gmbh & Co Kg|THYRISTOR|
    DE4137840A1|1991-11-16|1993-06-03|Asea Brown Boveri|High-voltage blocking semiconductor switch e.g. pin diode or GTO thyristor - has additional layer with doping concentration chosen so as to form two sided junction between layer and substrate|
    DE4218398A1|1992-06-04|1993-12-09|Asea Brown Boveri|High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers|
    DE4337209A1|1993-10-30|1995-05-04|Abb Management Ag|Switchable thyristor|
    JP3285007B2|1999-05-07|2002-05-27|日本電気株式会社|Detector for plating equipment|
    US6407411B1|2000-04-13|2002-06-18|General Electric Company|Led lead frame assembly|
    CN101582380B|2008-05-13|2012-11-28|杨景仁|High-pressure thyristor and production technique thereof|
    WO2011161097A2|2010-06-21|2011-12-29|Abb Technology Ag|Phase control thyristor with improved pattern of local emitter shorts dots|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    JP52123235A|JPS5912026B2|1977-10-14|1977-10-14|
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